- 您现在的位置：买卖IC网 > Sheet目录131 > DSEP6-06AS (IXYS)DIODE FRED 600V 6A TO-252AA
       ? 2006 IXYS All rights reserved 2 - 2 DSEP 6-06AS 0611 IXYS reserves the right to change limits, test conditions and dimensions. NOTE: Fig. 2 to Fig. 6 shows typical values 0 400 800200 600 1000A/μs 60 70 80 90 t 100 rr 110 0.00001 0.0001 0.001 0.01 0.1 1s t 0.001 0.01 0.1 1 10 0 40 80 120 160°C 0.0 0.4 0.8 1.2 1.6 2.0 Kf TVJ -diF/dt K/W 0 200 400 600 800 1000A/μs 0 5 10 15 20 0.0 0.3 0.6 0.9 1.2 VFR diF/dt V 0 400 800200 600 1000A/μs 0 10 20 30 100 1000A/μs 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 2.0 V 0 2 4 6 8 10 IRM Qr IF A VF -diF/dt -diF/dt A nC ns tfr μs DSEP 6-06AS ZthJC TVJ =150°C TVJ =100°C TVJ = 25°C IF = 12A IF = 6A IF = 3A TVJ = 100°C VR = 300V TVJ = 100°C VR = 300V TVJ = 100°C VR = 300V TVJ = 100°C I F = 6A VFR tfr IRM Qr IF = 12A IF = 6A IF = 3A IF = 12A IF = 6A IF = 3A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus VF Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR + t fr versus diF/dt Fig. 7 Transient thermal resistance junction to case |